Transport in graphene-boron nitride heterostructures

ORAL

Abstract

Transferring graphene on hexagonal boron nitride permits the fabrication of high mobility graphene devices. We report on in-plane transport measurements on dual gated graphene systems using boron nitride as a substrate. The low amount of disorder allows for ballistic effects to be probed, as we can gate-define regions narrower than the mean free path. This work is supported by the Center on Functional Engineered Nano-Architectonics.

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Authors

  • Francois Amet

    Stanford University, Applied Physics Department, Stanford University

  • Andrei Garcia

    Stanford University

  • James Williams

    Stanford University, Physics Department, Stanford University

  • David Goldhaber-Gordon

    Stanford University, Physics Department, Stanford University