A study of the quantum Hall effect in CVD graphene synthesized on Cu

ORAL

Abstract

Graphene films grown by Chemical Vapor Deposition (CVD) have provided a viable way to large area, low cost graphene-based electronics. Graphene CVD grown on Cu was transferred to SiO2/Si substrates and Hall-bar devices with sizes as large as 150 $\mu $m were fabricated, exhibiting carrier mobility of $\sim $3000cm$^{2}$/Vs. At low temperatures, the half integer quantum-Hall effect (QHE) and Shubnikov-de Haas (SdH) oscillations confirmed the single layer quality of the transferred graphene films. Systematic measurements in the quantum Hall region such as the DC/AC current dependence, temperature dependence, and AC frequency dependence were carried out, and their impact on the breakdown of the QHE was investigated. From weak localization peak fitting, the phase coherence length of the CVD graphene is determined to be $\sim $3$\mu $m at 1.6K.

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Authors

  • Tian Shen

    Department of Physics, Purdue University, West Lafayette, IN, 47907 / PML, NIST, Gaithersburg, MD, 20899

  • Wei Wu

    Center for Advanced Materials, and ECE, University of Houston, Houston, Texas, 77204

  • Helin Cao

    Department of Physics, Purdue University, West Lafayette, IN, 47907, Department of Physics, Purdue University, West Lafayette, IN 47907 USA, Purdue University

  • Yong P. Chen

    Department of Physics, Purdue University, Department of Physics, Purdue University, West Lafayette, IN, 47907, Purdue University, Department of Physics, Purdue University, West Lafayette, IN 47907 USA

  • David Newell

    PML, NIST, Gaithersburg, MD, 20899

  • C.A. Richter

    National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, Semiconductor Electornics Div. NIST, PML, NIST, Gaithersburg, MD, 20899, Semiconductor Electronics Division, NIST, National Institute of Standards \& Technology

  • Qingkai Yu

    Center for Advanced Materials, and ECE, University of Houston, Houston, Texas, 77204