Temperature Dependent Spin Transport in Silicon Controlled by an Electrostatic Gate

Long-distance ($\sim $500$\mu $m) lateral spin polarized electron transport in undoped silicon under the control of an electrostatic gate is studied from 40K to 120K. The temperature dependence of average spin polarization, transport time, and spin dephasing during coherent precession can be largely attributed to reduction of finite spin lifetime at higher temperatures. Measurements on devices with different transport lengths are shown to modify the effect of electrostatic gating.