Electric Field Induced Superconductivity in Layered Materials

Using electric double layer (EDL) gating, large amount of carriers can be accumulated on a broad range of materials, which provides new opportunities in effectively manipulating their electronic properties in complementary with the chemical doping. In searching for novel transport phenomena, layered materials are advantageous because atomically flat surface can be easily fabricated using the graphene techniques. We used layered material: ZrNCl and graphite to act as the channel of EDL transistors. For both ZrNCl and graphene, we achieved high carrier density up to 10$^{14}$ cm$^{-2}$, electrostatically. For graphene, we studied the high carrier density transport for graphene of 1-3 layers. Transport properties at the high carrier density exhibit clear layer dependence governed by the intrinsic band structures of graphene and its multi-layers. For ZrNCl EDL transistor, we observed metallic states at gate voltage higher than 3.5 V followed by gate-induced superconductivity after metal-insulator transition when the transistor was cooled down to about 15 K.