Novel Resistive Switching Behavior in Phase Separated Manganites

ORAL

Abstract

Electronic phase separation plays a key role in many novel phenomena in complex materials. Manganites are a prime example of this class of materials and have recently come under increase scrutiny for possible application in resistive random-access memory (RRAM) technology. Here, we will discuss our recent work on spatially confined La5/8-xPrxCa3/8MnO3. We have discovered that it is possible to drive single electronic domain formation/annihilation through electric field pulsing. By measuring the I-V curve, we find such resistive switching is different from normal RRAM mechanisms in manganites and is closely related to the nature of electronic phase separation. These findings open these systems to a new understanding of the nature of electronic phase separation and begin the development of manganites for future applications in RRAM devices.

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Authors

  • Hangwen Guo

    The University of Tennessee, Knoxville \& Oak Ridge National Laboratory, The University of Tennessee / Oak Ridge National Laboratory

  • T. Zac Ward

    Oak Ridge National Lab, Oak Ridge National Laboratory

  • Dali Sun

    Oak Ridge National Laboratory

  • Paul C. Snijders

    Oak Ridge National Lab, Oak Ridge National Laboratory

  • Zheng Gai

    Oak Ridge National Lab, Oak Ridge National Laboratory \& Center for Nanophase Materials Science, Oak Ridge National Laboratory

  • Jian Shen

    Oak Ridge National Lab, The University of Tennessee, Knoxville \& Fudan University, University of Tennessee \& Fudan University, The University of Tennessee / Fudan University, Fudan University; The University of Tennessee