Doping dependence of thermoelectric performance in Mo$_3$Sb$_7$: first principles calculations
ORAL
Abstract
Experimental studies have indicated the substantial thermoelectric promise of doped Mo$_3$Sb$_7$, with a figure-of-merit ZT of 0.9 (H. Xu {\it et al}, J. Appl. Phys. {\bf 105}, 053703 (2009)) already achieved at high temperature. However, optimal doping levels have not yet been achieved. We study doping of Mo$_3$Sb$_7$ with transition metals (Ni,Fe,Co,Ru) via first principles calculations, including electronic structure, lattice dynamics and Boltzmann transport. We discuss the selection of dopant and the potential thermoelectric performance of optimally doped Mo$_{3}$Sb$_{7}$.
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Authors
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David Parker
Oak Ridge National Laboratory
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Mao-Hua Du
Oak RIdge National Laboratory, Oak Ridge National Laboratory, Materials Science and Technology Division and Center for Radiation Detection Materials and Systems, Oak Ridge National Laboratory, Oak Ridge, TN 37831, Materials Science and Technology Division and Center for Radiation Detection Materials and Systems, Oak Ridge National Laboratory
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David Singh
Oak Ridge National Laboratory, ORNL, Oak Ridge National Lab