Thermoelectric Power in Dual-Gated Bilayer Graphene

We have performed thermoelectric transport measurements of dual-gated bilayer graphene device. The thermopower reached a maximum value of $\vert $Sm$\vert $ when tuning its carrier density by gates. The $\vert $Sm$\vert $ was found to monotonically increase with displacement field D introduced through the top and bottom gates. At 100K, $\vert $Sm$\vert $ attains a value of $\sim $ 110 uV/K at D $\sim $ 1V/nm, which is nearly two-fold larger than that at D = 0. The detailed temperature-dependence of Sm and comparison to the resistivity data will be presented.