Electron transport in coupled InGaAs quantum wires

ORAL

Abstract

Remotely doped InGaAs/GaAs heterostructures were grown by molecular beam epitaxy on the (311)A plane of GaAs. Applying strain driven epitaxy on the (311)A GaAs surface, two-dimensional quantum wells (QW) and quasi-one-dimensional quantum wires (QWr) were formed by varying InGaAs coverage between 6 and 11 monolayers. Polarization dependent photoluminescence and electrical conductivity experiments revealed a remarkable anisotropy in the QWr samples, which was insignificant in the QWs, the dimensionality of which was confirmed by atomic force and cross-sectional transmission electron microscopies. The resulting complex behavior of the electric current anisotropy as function of InGaAs coverage, doping and temperature is explained through a multi-band conductivity model, which is supported by magneto-transport measurements at low and high magnetic fields along with the Hall effect theory in anisotropic media with multi-band conduction.

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Authors

  • Vasyl Kunets

    University of Arkansas, Physics Department, Fayetteville, AR 72701, Arkansas Institute for Nanoscale Materials Science and Engineering, University of Arkansas

  • Sergey Prosandeev

    University of Arkansas, University of Arkansas, Physics Department, Fayetteville, AR 72701

  • Sabina Koukourinkova

    University of Arkansas, Physics Department, Fayetteville, AR 72701

  • Vitaliy Dorogan

    Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA, University of Arkansas, Physics Department, Fayetteville, AR 72701

  • Yuriy Mazur

    University of Arkansas, Physics Department, Fayetteville, AR 72701

  • Marcio Teodoro

    University of Arkansas, Physics Department, Fayetteville, AR 72701

  • Morgan Ware

    University of Arkansas, Physics Department, Fayetteville, AR 72701, Arkansas Institute for Nanoscale Materials Science and Engineering, University of Arkansas

  • Mourad Benamara

    University of Arkansas, Physics Department, Fayetteville, AR 72701

  • Peter Lytvyn

    University of Arkansas, Physics Department, Fayetteville, AR 72701

  • Gregory Salamo

    Institute of Nanoscale Science and Technology, University of Arkansas, University of Arkansas, Physics Department, Fayetteville, AR 72701, Arkansas Institute for Nanoscale Materials Science and Engineering, University of Arkansas