Electronic Transport in Exfoliated Bismuth Selenide

ORAL

Abstract

Recent theoretical and experimental work has identified bismuth selenide as a promising candidate for studies of three-dimensional topological insulators due to its large bulk semiconducting gap crossed by topological Dirac surface states. We report on the fabrication and measurement of mesoscale exfoliated bismuth selenide devices, including the effects of electric-field-effect gating and magnetic field on transport and possible signatures of topological states. We will also discuss fabrication strategies to mitigate surface disorder and doping

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Authors

  • Andrew Bestwick

    Stanford University

  • James R. Williams

    Stanford University

  • Patrick Gallagher

    Stanford University

  • David Goldhaber-Gordon

    Stanford University

  • James Analytis

    Stanford University, Stanford institute for materials and energy science, SLAC, SLAC, Stanford University, SLAC

  • Ian Fisher

    Department of Applied Physics, Stanford University, Stanford University, Stanford institute for materials and energy science, SLAC, SLAC, Stanford University, Stanford