Nanoscale control at the LaAlO$_{3}$/SrTiO$_{3}$ Interface grown on LSAT

The two-dimensional electron gas (2DEG) that forms at the interface between two semiconductors or between a semiconductor and oxide is currently the basis for some of the most useful electronic devices. We are able to control the 2DEG interface between LaAlO$_{3}$/SrTiO$_{3}$ with nanoscale precision and create transistors, nanodiodes and other nanostructures. Future scaling of oxide nanoelectronics requires scaling to wafer sizes larger than what can be provided from SrTiO$_{3}$. (LaAlO$_{3})_{0.3}$--(Sr$_{2}$AlTaO$_{3})_{0.7}$ (LSAT) substrates can allow for coherently strained LaAlO$_{3}$/SrTiO$_{3}$ heterostructures to be created. A sharp insulator to metal transition occurs at 8 uc LaAlO$_{3}$ thicknesses, in contrast to what is observed for unstrained SrTiO$_{3}$ substrates. We describe the properties of nanoscale structures created at the 2DEG interface of LaAlO$_{3}$/SrTiO$_{3}$ grown on LSAT wafers and compare them with structures grown on bulk SrTiO$_{3}$ substrates.