Large area growth of single layer graphene on the C-face SiC

High quality graphene, from monolayer to many layers are consistently grown on the carbon terminated face of 4H-SiC, using the confinement controlled sublimation growth method in an induction furnace. Here we show large area monolayer graphene grown on silicon carbide substrates with this method. C-face 1cmx1cm SiC samples were graphitized by carefully controlling silicon sublimation. Ellipsometry measurements demonstrate an essentially uniform high quality graphene layer over the entire surface. The SiC chip is entirely covered by monolayer graphene, with less that 5{\%} of bi-layer region. The thickness homogeneity is confirmed by photoemission electron microscopy, Raman spectroscopy, Atomic force microscopy (AFM). We also present transport measurements on single graphene layer C-face sample.