Crystal Growth of MoO$_{2}$ and K$_{x}$MoO$_{2-\delta}$

During the last years our group has searched for new quasi-one- dimensional (1D) conductors, which led to the discovery of K$_ {x}$MoO$_{2-\delta}$. The electrical resistivity of this compound is well described by a power law in temperature [1]. In this presentation, progress on the crystal growth of K$_{x} $MoO$_{2-\delta}$ will be discussed. Crystal growth of the parent compound MoO$_{2}$ utilizes chemical vapor transport (CVT) with iodine as transport agent. Crystal growth of K$_{x} $MoO$_{2-\delta}$ by CVT was carried out using high purity K$_ {2}$MoO$_{4}$, MoO$_{3}$, and Mo powders which were mixed in appropriate amounts (0 $\leq$ x $\leq$ 0.25) and sealed with I$_ {2}$ in quartz tubes, followed by heat treatment in temperature gradients from 750 to 950$^{o}$C for 100 h. The crystals were characterized by X-ray diffraction, scanning electron microscope (SEM), Raman spectroscopy, electrical resistance and magnetization measurements.\\[4pt] [1] L. M. S. Alves $\emph{et al.}$; Phys. Rev. B 81, 174532 (2010) and references therein.