Growths of InGaN Quantum Wells on GaN Micropyramids

Selective area epitaxy (SAE) of InGaN quantum wells on GaN micropyramids were grown by using metalorganic chemical vapor deposition (MOCVD). The pattern prepared for the SAE was fabricated by the deposition of 300 nm SiO$_{2}$ film on n-type GaN substrate by using plasma enhanced chemical vapor deposition (PECVD) and followed by photolithography. The grown micropyramid structures were characterized by scanning electron microscope (SEM) and photoluminescence (PL). Uniformly-distributed defect-free GaN micropyramids were observed by SEM. The growths of InGaN quantum wells were performed on the GaN micropyramids, and broadband luminescence were observed from the PL measurements applicable for white light-emitting diodes applications.