Self-confined GaN hetero-phased quantum wells

Wurtzite/zinc-blende/wurtzite GaN hetero-phased quantum wells (QWs) were grown by plasma-assisted molecular beam epitaxy. A self-assembling mechanism was used to simulate the hetero-phased QW, in which a wurtzite/zinc-blende phase transition was created by rotating the threefold symmetric N-Ga vertical bond of wurtzite 60$^{\circ}$. From the cathodoluminescence measurement, we observed an additional peak (energy $\sim $3.2eV) associated with GaN zinc-blende phase. From the transmission electron microscopy images and selective area electron diffraction patterns, we confirmed the formation of hetero-phased quantum wells with a transition of wurtzite/zinc-blende GaN [1]. \\[4pt] [1] I. Lo, Y.-C. Hsu, C.-H. Hsieh, W.-Y. Pang, M. M.C. Chou, Y.-L. Chen, C.-H. Shih, and Y.-C. Wang, Appl. Phys. Lett. \underline {\textbf{96}}, 222105 (2010).