First principle investigations of the dielectric properties of Si3N4 thin films

ORAL

Abstract

We have investigated the dielectric properties of silicon nitride thin films with thickness below 10 nm, by using first-principles density functional theory calculations. We find a substantial decrease of the static dielectric constant as the size is reduced, and the variation of the response in proximity of the film surfaces play a key role in the observed decrease. In addition, amorphization of the films can bring further reduction of both the static and optical dielectric constants.

–

Authors

  • Tuan Anh Pham

    Department of Chemistry, University of California Davis

  • Tianshu Li

    Department of Chemistry, University of California Davis, University of California, Davis, Dept. Chemistry, UC Davis, Department of Physics, University of California, Davis, CA 95616

  • Sadasivan Shankar

    Intel Corporation, Santa Clara, California, USA

  • Francois Gygi

    Department of Applied Science and Department of Computer Science, University of California Davis, University of California Davis, Dept. Applied Science \& Dept. Computer Science, UC Davis, UC Davis, Dept. of Applied Science and Dept. of Computer Science, UC Davis

  • Giulia Galli

    Dept. of Chemistry and Dept. of Physics, UC Davis, Department of Chemistry and Department of Physics, University of California Davis, Dept of Chemistry \& Dept Physics, UC Davis, Department of Chemistry and Department of Physics, UC Davis, USA, Department of Chemistry and Department of Physics, University of California, Davis, UC Davis, Department of Chemistry, University of California, Davis, USA, University of California, Davis, Department of Chemistry and Department of Physics, University of California, Davis, CA, 95616, Department of Chemistry and Department of Physics, University of California, Davis, CA 95616, Chemistry Department and Physics Department UC Davis, Davis CA