FET device with suspended graphene

Because of its linear electronic dispersion, graphene has been intensively studied for electronic application. Top-gated FET device has been measured [1]. Here we study the FET with high quality suspended graphene under high source-drain bias voltage. In addition, two-dimensional temperature distribution of the whole device has been detected by the Raman shift of its 2D peak around 2700cm$^{-1}$. \\[4pt] [1] Inanc Meric et al. \textit{Nature Nanotechnology} \textbf{3}, 654 - 659 (2008).