Low-Frequency Noise in Top-Gate Graphene Transistors

ORAL

Abstract

Electronic and sensor applications of graphene require low levels of the low-frequency noise. The unavoidable noise up-conversion results in serious limitations for practical use. Here we report results of our experimental investigation of flicker noise in the top-gate graphene field-effect transistors. We prepared graphene flakes by mechanical exfoliation and verified their quality with Raman spectroscopy. The hafnium-oxide top-gate dielectric was grown by the atomic layer deposition. The measurements revealed a low level of the noise with the spectrum close to 1/f [1-2]. The analysis of its gate dependence allowed us to identify the noise sources. The work at UCR was supported by DARPA -- SRC FENA and IFC. \\[4pt] [1] Q. Shao, G. Liu, et al., Electron Dev. Lett., 30, 288 (2009). \\[0pt] [2] G. Liu, et al., Appl. Phys. Lett., 95, 033103 (2009).

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Authors

  • Guanxiong Liu

    Department of Electrical Engineering, University of California - Riverside

  • William Stillman

    Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute

  • Sergey Rumyantsev

    Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute

  • Michael Shur

    Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute

  • A.A. Balandin

    Department of Electrical Engineering, University of California - Riverside, University of California - Riverside, Nano-Device Laboratory, Department of Electrical Engineering, University of California – Riverside, Riverside, CA 92521