Origin of the bias stress instability in single-crystal OFETs

ORAL

Abstract

We report on the electrical transport and UPS measurements of organic single-crystal field-effect transistors that reveal the mechanism of the bias stress effect in these devices. Data on several compounds will be presented.

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Authors

  • Vitaly Podzorov

    Rutgers University

  • Bumsu Lee

    Rutgers University

  • Daniel Mastrogiovanni

    Rutgers University

  • Alan Wan

    Rutgers University

  • Eric Garfunkel

    Rutgers University