Characterization of Soluble Anthradithiophene Derivatives

We will discuss the growth and electrical measurements of a newly developed, partially fluorinated anthradithiophene (F-ADT) derivative with tert-butyldiphenylsilyl (TBDMS) side groups. Single crystals of the material can be readily grown and device hole mobility is shown to exceed 0.05 cm$^{2}$/Vs with on/off ratios of 10$^7$. F- TBDMS ADT is also observed to be readily soluble with films spun cast onto surface treated SiO$_2$ displaying a mobility $>$0.002 cm$^2$/Vs. These electrical measurements will be correlated with growth, morphology, and the performance of related F-ADT derivatives.