A Direct Determination of the Structure of Polar SrTiO3 on Silicon

ORAL

Abstract

The epitaxial growth of perovskite oxide structures on silicon substrates has opened the door for the integration of a wide range of novel physical properties unique to complex oxides with established silicon-based technologies. A model system is the polar SrTiO3/Si system. Synchrotron based x-ray diffraction measurements allow a direct determination of the structure of the SrTiO3-Si interface, as well as the atomic displacements in the SrTiO3 film. A combination of direct phasing methods and fitting algorithms is used to convert the diffraction data into sub-angstrom resolution real space structural maps. The results can be used to understand the polarization observed in the SrTiO3 thin films and the measured differences between 2.5 and 5 unit cell SrTiO3 deposited on Si.

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Authors

  • Divine Kumah

    Center for Research on Interface Structure and Phenomena and Department of Applied Physics, Yale University, New Haven, CT

  • James Reiner

    Yale University, Center for Research on Interface Structure and Phenomena and Department of Applied Physics, Yale University, New Haven, CT

  • Yaron Segal

    Center for Research on Interface Structure and Phenomena and Department of Applied Physics, Yale University, New Haven, CT

  • Zhan Zhang

    Advanced Photon Source, Argonne National Laboratory, Argonne, IL

  • Alexie Kolpak

    Center for Research on Interface Structure and Phenomena and Department of Applied Physics, Yale University, New Haven, CT

  • Sohrab Ismail-Beigi

    Department of Physics and Applied Physics, Yale University, Yale University, Center for Research on Interface Structure and Phenomena and Department of Applied Physics, Yale University, New Haven, CT, Center for Research on Interface Structures and Phenomena, Yale University, Department of Applied Physics, Yale University

  • Charles Ahn

    Center for Research on Interface Structure and Phenomena and Department of Applied Physics, Yale University, New Haven, CT

  • Fred Walker

    CRISP, Yale University, Yale University, Applied Physics and Center for Research on Interface Structure and Phenomena, Yale University, Center for Research on Interface Structure and Phenomena and Department of Applied Physics, Yale University, New Haven, CT