Voltage triggered resistance switching in two terminal VO$_{2}$ nano-junctions fabricated by electron-beam lithography

Vanadium dioxide (VO$_{2}$) thin films have been shown to undergo an abrupt decrease in resistivity, both in response to increasing temperature as well as an increasing electric field. The ultra-fast electrically triggered transition has made VO$_{2}$ an exciting platform to explore a range of potential applications, from high speed switches to memory elements. Particularly valuable to such investigation is characterization of the electronic properties of VO$_{2}$ thin films, in which transport is additionally constrained within nanoscale dimensions along the in-plane directions. In this poster, we describe the results of transport measurements on VO$_{2}$ nanojunctions grown on a conductive substrate and patterned by electron-beam lithography. We analyze the out-of-plane I-V data and present a detailed discussion on electron transport mechanisms and on the origin behind the electrically triggered conductivity jumps that we observe in these nano-junctions.