Si/SiGe Quantum Dot with SET Charge Sensor

ORAL

Abstract

Si/SiGe quantum dots promise a long spin coherence time due to reduced electron-nuclear spin interaction. Based on robust fabrication process we have developed, reliable ohmic contacts and non-leaky Schottky gates are repeatedly produced. As a result, stable quantum dots have been successfully formed, with sufficiently high yield to allow subsequent fabrication steps. Representative Coulomb blockade data will be shown. Efforts to couple a single electron transistor (SET) to a Si/SiGe dot in order to monitor its charge state are in progress. Recent experimental results will be discussed.

–

Authors

  • Mingyun Yuan

    Department of Physics and Astronomy, Dartmouth College

  • Zhen Yang

    Department of Physics and Astronomy, Dartmouth College

  • A. J. Rimberg

    Dartmouth College, Department of Physics and Astronomy, Dartmouth College

  • M. A. Eriksson

    University of Wisconsin Madison, University of Wisconsin-Madison, Department of Physics, University of Wisconsin-Madison, University of Wisconsin - Madison

  • D. E. Savage

    Material Science Center, University of Wisconsin-Madison