A Novel Spin-Flip Co-Tunneling Process in the Effective Three-Electron Regime of a Si/SiGe Double Dot

ORAL

Abstract

We study the transport current of a Si/SiGe double quantum dot in the effective three-electron regime, commonly referred to as ``hole'' transport in the literature. Experimental data is modeled with a Hartree-Fock Hamiltonian. We show that the conventional hole transport picture cannot account for all of the features of the data. We also show that understanding the experimental data requires a novel co-tunneling process involving spin flips. This process is possible partly due to the effect of lifetime-enhanced transport [1].\\[4pt] [1] Shaji, N. \textit{et al.} Nature Physics, \underline{4}, 540 (2008).

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Authors

  • Teck Seng Koh

    Department of Physics, University of Wisconsin-Madison

  • C. B. Simmons

    Department of Physics, University of Wisconsin-Madison, University of Wisconsin-Madison, University of Wisconsin - Madison

  • Mark Friesen

    Department of Physics, University of Wisconsin-Madison, University of Wisconsin-Madison, University of Wisconsin - Madison

  • Susan Coppersmith, University of Wisconsin

    Department of Physics, University of Wisconsin-Madison, University of Wisconsin-Madison, University of Wisconsin - Madison, and Luz J. Martinez-Miranda, University of Maryland

  • M. A. Eriksson

    University of Wisconsin Madison, University of Wisconsin-Madison, Department of Physics, University of Wisconsin-Madison, University of Wisconsin - Madison