Traditional and Novel dielectric dielectric materials for Epitaxial Graphene electronics applications
ORAL
Abstract
Graphene field effect transistor performance relies on the quality of the dielectric and its interaction with the graphene layer. The high frequency cutoff is currently, for a large part related to losses and mobility reductions caused by the dielectric overlayers. We will present a progress report on traditional (ALD) dielectrics as well as novel approaches including chemically modified graphene.
–
Authors
-
Yike Hu
School of Physics, Georgia Institute of Technology, Georgia Institute of Technology
-
Claire Berger
Georgia Institute of Technology, School of Physics, Georgia Institute of Technology \& CNRS/Institut Neel
-
Walt de Heer
Georgia Institute of Technology