Characterization investigation and evaluation of ESD robustness of high power light-emitting diodes

POSTER

Abstract

This paper reports on the ability of high power light-emitting diodes (LED) to endure electrostatic discharge (ESD). The en-durance of ESD is a part of reliability of LED, especially in the horizontal structure of the insulating property of the sapphire substrate. Under the test of reverse-bias stress, the endurance of ESD is stronger as the leakage current of LED is smaller. Al-though many companies adopt the vertical structure which the substrate is conductive as their products, modification of the electrical properties of LED is an important subject in reliability engineering.

Authors

  • Shih-Chun Yang

    Industrial Technology Research Institute, National Chiao-Tung University

  • Pang Lin

    National Chiao-Tung University

  • Han-Kuei Fu

    Industrial Technology Research Institute

  • Chien-Ping Wang

    Industrial Technology Research Institute

  • Tzung-Te Chen

    Industrial Technology Research Institute

  • An-Tse Lee

    Industrial Technology Research Institute

  • Sheng-Bang Huang

    Industrial Technology Research Institute

  • Mu-Tao Chu

    Industrial Technology Research Institute