Band alignment and interdiffusion at the BaCuSeF/ZnTe interface

ORAL

Abstract

In-situ ultraviolet- and x-ray photoemission spectroscopy experiments (XPS/UPS) on the wide-bandgap p-type semiconductor BaCuSeF indicate that it forms an ideal p-type contact to ZnTe. The interface is interdiffused, and there is no valence band offset. The transitivity rule for the valence band offsets and the similar chemistry of ZnTe and CdTe suggest that BaCuSeF is a promising p-type window layer for CdTe p-i-n double-heterojunction solar cells. BaCuSeF anode may also improve collection of charge carriers in thin film inorganic photovoltaic devices based on Cu(InGa)Se2 (CIGS) and Cu2ZnSnS4 (CZTS) absorbers.

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Authors

  • Andriy Zakutayev

    Department of Physics, Oregon State University, Oregon State University, Department of Physics, Oregon State University, USA

  • Janet Tate

    Oregon State University, Department of Physics, Oregon State University, Corvallis, OR 97331, Department of Physics, Oregon State University, USA

  • Heather Platt

    Department of Chemistry, Oregon State University, USA

  • Douglas Keszler

    Department of Chemistry, Oregon State University, USA

  • Alireza Barati

    Division of Surface Science, Darmstadt University of Technology, Germany

  • Wolfram Jaegermann

    Division of Surface Science, Darmstadt University of Technology, Germany

  • Andreas Klein

    Division of Surface Science, Darmstadt University of Technology, Division of Surface Science, Darmstadt University of Technology, Germany