Spin lifetime properties of a quantum well GaAs sample measured by optically detected magnetic resonance

Optically detected Kerr rotation techniques were used to measure spin properties in GaAs. The samples studied were MBE-grown 14 nm n-type GaAs quantum wells. Magnetic resonance was observed with great sensitivity as the probe laser was tuned to the exciton resonance. The g-factor was measured to be $\vert $g$\vert $=0.35. The T$_{2}$* lifetime measured from the width of the ODMR peaks was 52 ns. Results from pulsed microwave Rabi oscillation and spin echo experiments (to measure the T$_{2}$ spin coherence lifetime) are presented.