Scaling behavior of spin-dependent scattering off Neutral Donors in Silicon Field-Effect Transistors

Spin-dependent scattering of conduction electrons by neutral impurities is a promising route towards donor nuclear spin-state readout for donor qubits in silicon. Using electron spin resonance techniques, the donor nuclear spin-state can be extracted from the position of the resonance signal. Contrary to readout schemes involving Coulomb/spin blockade or other single electron phenomenon, spin-dependent scattering can be observed and studied in the presence of an ensemble of donors. In our experiments we study neutral impurity scattering of two-dimensional conduction electrons by donor impurities in field-effect transistors [1]. In this talk, we will discuss the scaling behavior of donor resonance signals using electrically detected magnetic resonance techniques in devices with different sizes. [1] C. C. Lo et al, App. Phys. Lett., 91, 242106 (2007)