The effect of SiO$_{2}$ surface states on the electronic characteristics of graphene FET devices

ORAL

Abstract

Electronic states localized at the surface of oxide semiconductors are a common cause of their low ionization potential. We study the properties of the SiO$_{2}$ surface states using density functional theory (DFT) and show that they strongly affect the intrinsic doping of graphene on oxidized silicon substrates. We present simple empirical model that it is parameterized from the DFT calculations. The model demonstrates that Dirac voltages as large as 50~V and intrinsic n-doping are produced by the presence of these surface states. We extend it to include the effect of other adsorbates, such as water, that modify the dielectric properties of the device.

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Authors

  • Jorge Sofo

    Department of Physics, Penn State, Dept. of Physics, Penn State, Department of Physics, The Pennsylvania State University

  • Ning Shen

    Dept. of Physics, Penn State

  • Hugo Romero

    Dept. of Physics, Penn State, Physics Department, Pennsylvania State University, Physics Department, Penn State University

  • Peter Eklund

    Physics Department, Penn State University, Dept. of Physics, Penn State, Department of Physics, The Pennsylvania State University, Department of Physics, Department of Materials Science and Engeering, The Pennsylvania State University, Department of Physics, Department of Material Science and Engineering, Pennsylvania State University, University Park, PA 16802, Physics Department, Material Science \& Engineering Department, Department of Physics, Department of Material Sciece and Engineering, Pennsylvania State University, Department of Physics, Department of Materials Science \& Engineering and Materials Research Institute, Penn State University, Physics Department,Materials Science \& Engineering Department, Pennsylvania State University