Weak localization effects in Al-doped ZnO films

ORAL

Abstract

Metal-semiconductor transitions (MST) at low temperatures were studied for (0001)-oriented Zn$_{1-x}$Al$_{x}$O thin films deposited by simultaneous RF magnetron sputtering of ZnO and Al onto (11-20)-oriented Al$_{2}$O$_{3}$ substrates. The MST occurs at 190K, 102K and 260K for x=2{\%}, 3{\%} and 10{\%} of Al-doping, respectively. The samples display negative magnetoresistance at low temperatures with zero-field electrical resistivity being as low as 3.3 $\times$ 10$^{-4} \quad \Omega $-cm for x=3{\%}. The charge scattering mechanisms below the MST will be discussed in light of weak localization and coulomb interactions due to disorder in the system. *Also with Dept of Physics, NSYSU, Taiwan.

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Authors

  • Priya.V Chinta*

    Department of Physics and Texas Center for Superconductivity, University of Houston,TX

  • Q.Y. Chen*

    Department of Physics and Texas Center for Superconductivity, University of Houston, Houston, TX, Department of Physics and Texas Center for Superconductivity, University of Houston,TX

  • O. Lozano*

    Department of Physics and Texas Center for Superconductivity, University of Houston, Houston, TX, Department of Physics and Texas Center for Superconductivity, University of Houston,TX

  • P.V. Wadekar

    Department of Physics and Texas Center for Superconductivity, University of Houston, Houston, TX, Department of Physics and Texas Center for Superconductivity, University of Houston,TX, Department. of Physics \& Texas Center for Superconductivity, University of Houston, Texas, 77204, USA

  • W.K. Chu

    Department of Physics and Texas Center for Superconductivity, University of Houston, Houston, TX, Department of Physics and Texas Center for Superconductivity, University of Houston,TX

  • S.W. Yeh

    Department of Materials and Optoelectronic Sciences and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan, Center for Nanoscience and Nanotechnology and Dept of Materials and Optoelectronic Engg, National Sun Yat-Sen University (NSYSU), Kaohsiung, Taiwan

  • N.J. Ho

    Department of Materials and Optoelectronic Sciences and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan, Center for Nanoscience and Nanotechnology and Dept of Materials and Optoelectronic Engg, National Sun Yat-Sen University (NSYSU), Kaohsiung, Taiwan

  • L.W. Tu

    Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan, Republic of China, Center for Nanoscience and Nanotechnology and Dept of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan

  • Yung-Hsi Chang

    Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan, Republic of China, Center for Nanoscience and Nanotechnology and Dept of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan, Department of physics, National Sun Yat-sen University, Kaohsiung, Taiwan, Republic of China

  • Wen-Yuan Pang

    Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan, Republic of China, Center for Nanoscience and Nanotechnology and Dept of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan, Department of physics, National Sun Yat-sen University, Kaohsiung, Taiwan, R.O.C., Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan, R.O.C., Department of physics, National Sun Yat-sen University, Kaohsiung, Taiwan, Republic of China

  • Ikai Lo

    Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan, Republic of China, Center for Nanoscience and Nanotechnology and Dept of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan, Department of physics, National Sun Yat-sen University, Kaohsiung, Taiwan, R.O.C., Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan, R.O.C., Department of physics, National Sun Yat-sen University, Kaohsiung, Taiwan, Republic of China

  • H.W. Seo

    Department of Physics, University of Arkansas, Little Rock, AR, Dept of Physics, University of Arkansas, AR