Nonequilibrium transport in the Anderson model of a biased quantum dot

We derive the transport properties of a quantum dot subject to a source-drain bias by means of the Scattering Bethe Anstaz, a generalization of the traditional Thermodynamic Bethe Ansatz to open systems out of equilibrium, which allows a description of the the system in nonequilibrium steady state over the full range of its parameters. Solving the equations at zero temperature and magnetic field we present here the non-linear conductance against the bias voltage with arbitrary tunneling rate and with the gate voltage varying from the mixed valence to the Kondo regime.