Magnetotranport properties of magnetic InMnSb semiconductor films.

Magnetotransport properties of the magnetic semiconductor In$_{1-x}$M$_{x}$nSb were investigated for temperatures from 1.4 to 300 K and magnetic fields up to 18 T. Films are $p$-type, with carrier concentration $\sim $ 10$^{19}$ cm$^{-3}$, and exhibit anomalous Hall Effect at room temperature. At low temperatures and low fields, negative magnetoresistance of 4 percent was observed, for a film with x = 0.035. For higher fields, a positive magnetoresistance of 9 percent was observed. At 300 K, positive magnetoresistance with hysteretic behavior was observed. The magneto-resistive properties are analyzed with respect to recent models of spin-dependent scattering in magnetic semiconductors.