Detection of terahertz radiation from 410 GHz CMOS circuit and other high-frequency oscillators using a Fourier Transform Interferometer

Recently, a record-setting operating frequency of 410 GHz was reported for a CMOS circuit, fabricated using 45 nm technology. To measure the emission from this and related devices, we employed a Bruker 113v fourier transform interferometer. The radiation from an on-chip patch antenna attached to the 410 GHz push-push oscillator circuit was measured by placing the chip in the lamp housing of the interferometer. Emission was detected in the first and second harmonics of the oscillator fundamental. Power was estimated by comparison to that from quasi-blackbody sources (globar and mercury lamp). Possible applications will be discussed.