Quantum and transport scattering times in graphene

ORAL

Abstract

We study the quantum ($\tau_q$) and transport ($\tau_t$) scattering times of single layer graphene mechanically exfoliated on SiO$_2$ and polycrystalline Pb(Zr,Ti)O$_3$ (PZT) substrates. The PZT substrate exhibits a gating efficiency of $\sim2\times10^{11}$/cm$^2$/V$_g$(V), corresponding to a dielectric constant of $\sim$12. We extract $\tau_q$ from the magnetic field dependence of Shubnikov de Haas oscillations and $\tau_t$ from the zero field mobility, respectively. For the PZT-gated graphene, in the density range of $2\times10^{12} $/cm$^2

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Authors

  • Xia Hong

    Department of Physics, Penn State University, Pennsylvania State University

  • K. Zou

    Department of Physics, The Pennsylvania State University, Department of Physics, Penn State University

  • J. Zhu

    Department of Physics, The Pennsylvania State University, Department of Physics, Penn State University

  • A. Posadas

    Department of Applied Physics, Yale University

  • J. Hoffman

    Yale University and Center for Research on Interface Structures and Phenomena (CRISP), Department of Applied Physics, Yale University

  • Charles Ahn

    Yale University and Center for Research on Interface Structures and Phenomena (CRISP), Yale University, Yale, CRISP, Department of Applied Physics, Yale University