Generation and transport of photo-excited carriers in diamond

ORAL

Abstract

Photo-excited carrier transport in diamond has generated substantial interest in the past few years. The combination of high thermal conductivity, large band-gap, and large dielectric breakdown make diamond attractive in optoelectronic, high-power and high-frequency applications. Here we present measurements of electrical conduction by sub-band gap photo-excited carriers between metallic gates lithographically patterned on the surface of single-crystal type Ib diamond. The time-dependent charging and discharging photo-currents follow a ``stretched exponential'' form, which results from a trap state conduction mechanism mitigated by a local space charge. We also perform photo-excited magneto-transport as well as energy-dependant photo-conduction measurements to investigate the detailed origins of this sub-gap photo-excited conduction.

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Authors

  • F.J. Heremans

    Center for Spintronics and Quantum Computation, University of California, Santa Barbara, 93106

  • G.D. Fuchs

    Center for Spintronics and Quantum Computation, University of California, Santa Barbara, 93106, Center for Spintronics and Quantum Computation, University of California, Santa Barbara, CA

  • C.F. Wang

    Center for Spintronics and Quantum Computation, University of California, Santa Barbara, 93106

  • D.D. Awschalom

    University of California, Santa Barbara, University of California Santa Barbara, UCSB, Dept. of Physics, University of California, Santa Barbara CA 93106, Department of Physics, University of California, Santa Barbara, California 93106, USA, Center for Spintronics and Quantum Computation, University of California, Santa Barbara, CA 93106, Center for Spintronics and Quantum Computation, University of California, Santa Barbara, 93106, Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California

  • Ronald Hanson

    Kavli Institute of Nanoscience, Delft University of Technology, The Netherlands