Moir\'{e} Patterns: Fingerprints of Few-Layer Epitaxial Graphene Growth on 4H-SiC(000$\bar{1}$)

ORAL

Abstract

Few-layer epitaxial graphene (FLG) was grown by heating [000$\bar{1}$] silicon carbide to high temperatures (1350--1600$^{\circ}$C) in vacuum. A continuous graphene surface layer was formed at temperatures of 1475$^{\circ}$C and greater. X-ray photoelectron spectroscopy (XPS) and scanning tunneling microscopy (STM) were used to characterize the quality, thickness, and topography of the FLG. STM studies revealed a wide variety of different nanometer-scale features that include rough graphene, 1D superlattices, grain boundaries, and Moir\'{e} 2D superlattices. Detailed studies of the Moir\'{e} superlattices showed enhanced conductivity due to density of states effects. These Moir\'{e} superlattices also provided insights into the growth mechanisms of FLG on the carbon-face of SiC. \\[0pt] L. Biedermann \textit{et al.}, ``Insights into Few-Layer Epitaxial Graphene Growth on 4H-SiC(000$\bar{1}$) Substrates from STM Studies,'' \textbf{Phys. Rev. B} (submitted).

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Authors

  • Laura Biedermann

    Birck Nanotechnology Center, Purdue University, Dept. of Physics and Birck Nanotechnology Center, Purdue University

  • Michael Bolen

    School of Electrical Engineering and Birck Nanotechnology Center, Purdue University, School of Electrical Eng. and Birck Nanotecnology center, Purdue U., W. Lafayette 47907

  • Michael Capano

    School of Electrical Engineering and Birck Nanotechnology Center, Purdue University

  • Dmitry Zemlyanov

    Birck Nanotechnology Center, Purdue University, Birck Nanotecnology center, Purdue U., W. Lafayette 47907

  • Ronald Reifenberger

    Birck Nanotechnology Center, Purdue University, Dept. of Physics and Birck Nanotechnology Center, Purdue University