Thermopower of n- and p-type InN
ORAL
Abstract
The exceptionally large ($>$ 5.5 eV) electron affinity of InN leads to unique electronic properties such as surface electron accumulation and an extreme propensity for n-type conduction. This, combined with a small energy gap and strongly energy dependent effective mass, makes an analysis of charge transport and determination of band structure parameters an arduous task. In this work we show that thermopower (Seebeck coefficient) measurements can address some of the issues by providing a new tool to study the unique charge transport properties of InN and In-rich group III-nitride alloys. Our thermopower experiments are used to demonstrate the presence of mobile holes in Mg-doped InN providing the first direct, quantitative measurement of hole transport in InN. We also report modeling of the thermopower of n-type InN considering the various scattering mechanisms.
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Authors
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Nate Miller
Lawrence Berkeley National Lab, Univ. of California - Berkeley
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Joel Ager
Lawrence Berkeley National Lab
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Rebecca Jones
Lawrence Berkeley National Lab, Univ. of California - Berkeley
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Holland Smith
Lawrence Berkeley National Lab, Univ. of California - Berkeley
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Kin Man Yu
Lawrence Berkeley National Lab
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Eugene Haller
Lawrence Berkeley National Lab, Univ. of California - Berkeley
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Wladek Walukiewicz
Lawrence Berkeley National Laboratory, Lawrence Berkeley National Lab
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William Schaff
Cornell University, Ithaca, NY, Cornell University
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Chad Gallinat
Univ. of California -- Santa Barbara
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Gregor Koblmuller
Univ. of California -- Santa Barbara
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Jim Speck
Univ. of California -- Santa Barbara