Gate Controlled Negative Differential Resistance and Photoconductivity Enhancement in Carbon Nanotube Intra-connects

ORAL

Abstract

Field effect transistors were fabricated using carbon nanotubes (CNT). Gate-controlled, N-shaped negative differential resistance (NDR) has been demonstrated. In addition, a large photoconductance effect was associated with the NDR. The intra-connects -- bridges spanning across planar electrodes and contain individual tube or in a small bundle -- were grown using chemical vapor deposition (CVD) precisely between very sharp metal tips on the pre-fabricated electrodes. NDR was observed for intra-connects exhibiting either, ohmic or, non-ohmic contacts. Yet, the enhanced photoconductivity was more pronounced for intra-connects exhibiting ohmic contact at zero gate bias.

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Authors

  • Seon Woo Lee

    Electronic Imaging Center at NJIT and the Electrical and Computer Engineering Department, New Jersey Institute of Technology (NJIT), Newark, NJ 07102

  • Slava Rotkin

    Lehigh University, Department of Physics, Lehigh University, Lehigh University, Physics Dept., 16 Memorial Dr. East, Bethlehem, PA 18015, Lehigh University, Physics Department, 16 Memorial Drive East, Bethlehem, PA 18015, Physics Department and CAMN, Lehigh University, Bethlehem, PA 18015

  • Andrei Sirenko

    New Jersey Institute of Technology, Physics Department, New Jersey Institute of Technology (NJIT), Newark, NJ 07102

  • Haim Grebel

    Deaprtment of Electrical and Computer Engineering and the Electronic Imaging Center, New Jersey Institute of Technology, New Jersey Nanotechnology Consortium (NJNC), Lucent Technologies Bell Labs, Murray Hill, NJ 07974, Electronic Imaging Center at NJIT and the Electrical and Computer Engineering Department, New Jersey Institute of Technology (NJIT), Newark, NJ 07102