Electronic properties of manganite / titanate superlattices

ORAL

Abstract

Here we report on the study of LaMnO$_{3}$/SrTiO$_{3}$ interfaces. While LMO in bulk is an antiferromagnetic Mott insulator and STO is a band insulator, LMO/STO superlattices exhibit ferromagnetism and in some cases metallicity, both of which can be tuned by changing the layer thicknesses. We will compare the structure, chemistry and electronic properties of LMO/STO interfaces in high quality superlattices grown by pulsed laser deposition and high O$_{2}$ pressure sputtering. The distribution of defects and electronic properties will be studied through aberration corrected electron microscopy and electron energy loss spectroscopy. PLD superlattices show two alternating interface terminations, LaO-TiO$_{2}$ and SrO-MnO$_{2}$, which cause an asymmetry in the LMO layer electronic properties. Superlattices grown by sputtering only show one termination, LaO-TiO$_{2}$, giving an overall electron doping to the system. The role of interfacial charge transfer or localization, and any changes in electronic properties due to structural relaxations induced by epitaxial strain will be examined.

Authors

  • Maria Varela

    Oak Ridge National Laboratory, Materials Science \& Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA, ORNL, Oak Ridge Natl. Lab.

  • H. Christen

    Oak Ridge Natl. Lab.

  • H.N. Lee

    Oak Ridge National Laboratory, Oak Ridge Natl. Lab.

  • L. Petit

    Oak Ridge Natl. Lab.

  • T. Schulthess

    Oak Ridge National Laboratory, Oak Ridge Natl. Lab.

  • S. Pennycook

    Oak Ridge National Laboratory, Materials Science \& Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA, Oak Ridge Natl. Lab.

  • J. Garcia-Barriocanal

    Universidad Complutense de Madrid, Spain, U. Complutense Madrid, Spain, GFMC, Universidad Complutense de Madrid, Madrid 28040, Spain, Univ. Complutense, Spain

  • A. Rivera

    Univ. Complutense, Spain

  • F.Y. Bruno

    U. Complutense Madrid, Spain, Univ. Complutense, Spain

  • Z. Sefrioui

    Universidad Complutense de Madrid, Spain, GFMC, Universidad Complutense de Madrid, Madrid 28040, Spain, Univ. Complutense, Spain

  • C. Leon

    Universidad Complutense de Madrid, Spain, GFMC, Universidad Complutense de Madrid, Madrid 28040, Spain, Univ. Complutense, Spain

  • J. Santamaria

    Universidad Complutense de Madrid, Universidad Complutense de Madrid, Spain, U. Complutense Madrid, Spain, GFMC, Universidad Complutense de Madrid, Madrid 28040, Spain, Univ. Complutense, Spain