Structural, electrical and magnetic properties of Bi(Fe$_{x}$,Ti$_{1-x})$O$_{3}$ thin films

Multiferroic materials have recently seen a surge of research activities due to its applications in the memory, spintronics, sensors devices and micro mechanical systems (MEMS). BiFeO$_{3}$ is a naturally occurring multiferroics. However, the large leakage current is a concern for practical applications and substitution at Bi and Fe is commonly employed to circumvent this problem. Here, Fe substitution by Ti is considered for this purpose. Thin films on Pt/Ti/SiO$_{2}$ /Si were grown by chemical solution deposition (CSD) and characterized for structure and symmetry by XRD and Raman scattering, surface morphology by AFM, dielectric properties by impedance analyzer, and the leakage current by I-V measurements. Magnetic (M-H) and electric (P-V) hysterisis loops were also studied. Variation of dielectric constant ($\varepsilon _{r})$ and loss tangent (tan$\delta )$ with temperature, frequency and temperature were systematically studied. Further, the effect of Ti substitution on the electrical properties will be presented.