Charge accumulation in nonpolar perovskite quantum well sandwiched by polar Mott-insulating perovskites

ORAL

Abstract

We theoretically examine the possibility of having charge accumulation in the (LaTiO3)$_{n}$/Ba2VO4/(LaTiO3)$_{n}$ layered oxide quantum well system with polar barrier material and non-polar quantum well material using a LDA+U approach. The charge accumulation we find reflects electronic reconstruction which tends to occur near polar/nonpolar heterojunctions. We find enormous orbital reconstruction and both antiferromagnetic and ferromagnetic local in different planes. Lattice relaxation in the structure was allowed as a partial test of the robustness of LDA+U predictions for the properties of this system.

–

Authors

  • Cheng-Ching Wang

    University of Texas at Austin, Dept. of Physics, Univ. of Texas at Austin

  • Bhagawan Sahu

    SWAN, Microelectronics Research Center, Microelectronics Research Center, University of Texas, Austin TX 78758

  • Hongki Min

    University of Texas at Austin, Department of Physics, University of Texas, Austin, TX 78712, The University of Texas at Austin

  • Wei-Cheng Lee

    Department of Physics, the University of Texas at Austin, Austin TX 78712, University of Texas at Austin

  • Allan MacDonald

    University of Texas at Austin, University of Texas, Dept. of Physics, Univ. of Texas at Austin, Department of Physics, University of Texas, Austin, TX 78712, Department of Physics, The University of Texas at Austin, Austin Texas 78712, The University of Texas at Austin, Department of Physics, University of Texas at Austin