Properties of MgB$_{2}$ Thin Films Grown at Different Temperatures by Hybrid Physical-Chemical Vapor Deposition

ORAL

Abstract

MgB$_{2}$ films grown by Hybrid Physical-Chemical Vapor Deposition (HPCVD) at high temperature excel in $T_{c}$, cleanness, and crystallinity. MgB$_{2}$ films have been grown at temperatures from 350$^{^{\circ}}$C to 750$^{^{\circ}}$C by a HPCVD system with separate Mg and substrate heaters. The 100 nm MgB$_{2}$ film grown on a (001) SiC substrate at 350$^{^{\circ}}$C has a $T_{c0}$ of about 36K and a residual resistance ratio of about 1.4. X-ray diffraction and atomic force microscopy show that the film is polycrystalline. The low-temperature grown MgB$_{2}$ films are promising as the top electrode for sandwich-type all-MgB$_{2}$ junctions to preserve the integrity of the barrier layer.

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Authors

  • Menno Veldhorst

    Department of Physics, The Pennsylvania State University, University Park, Pennsylvania, USA

  • Ke Chen

    Department of Physics, The Pennsylvania State University, University Park, Pennsylvania, USA

  • Che-Hui Lee

    Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania, USA

  • Qi Li

    Department of Physics, The Pennsylvania State University, University Park, Pennsylvania, USA, Department of Physics, Penn State University, University Park, PA, USA

  • Xiaoxing Xi

    Department of Physics, The Pennsylvania State University, University Park, Pennsylvania, USA, The Pennsylvania State University, Department of Materials Science and Engineering, Penn State University, University Park, PA, USA, Pennsylvania State University