Spin transport through n-type doped silicon using electrical methods

In this presentation, we report on all-electrical injection, transport, and detection of spin-polarized electrons through a 3um n-type Phosphorus-doped single-crystal silicon device. Using our hot-electron methods, we demonstrate both spin-valve behavior in an in-plane magnetic field and spin precession in a perpendicular magnetic field. Voltage spectroscopy reveals the effects of charge screening and band bending in the spin transport layer which are not evident in the operation of our previously-studied undoped silicon devices [1,2]. \newline References \newline [1] Ian Appelbaum et al. Nature 447, 295 (2007). \newline [2] Biqin Huang et al. Phys. Rev. Lett. 99, 177209 (2007).