Characterization of Epitaxial Graphene Oxide

ORAL

Abstract

Graphite oxide is a layered semiconducting material that is produced from graphite or graphene by chemical oxidation. The material is characterized by various probes such as transport, Raman spectroscopy and optical absorption spectroscopy. Here we present the properties of graphene oxide, which is chemically converted from epitaxial graphene directly on silicon carbide chips. The absorption spectrum indicates a large band gap and the Raman spectrum shows a pronounced D line while the 2D line is absent.

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Authors

  • Fan Ming

    School of Physics, Georgia Institute of Technology, Georgia Institute of Technology

  • Mike Sprinkle

    Georgia Institute of Technology, School of Physics, Georgia Institute of Technology, Georgia Tech-Physics, Atlanta

  • Xuebin Li

    School of Physics, Georgia Institute of Technology, Georgia Institute of Technology, Georgia Tech-Physics, Atlanta

  • Xiaosong Wu

    School of Physics, Georgia Tech, School of Physics, Georgia Institute of Technology, Georgia Institute of Technology, Georgia Tech-Physics, Atlanta

  • Claire Berger

    Georgia Institute of Technology/ CNRS, France, School of Physics, Georgia Institute of Technology, and CNRS - Institut Neel, Grenoble - France, Georgia Institute of Technology - USA; CNRS - Institut Neel, Grenoble - France, Georgia Tech-Atlanta and CNRS-France

  • Walt de Heer

    Georgia Institute of Technology, School of Physics, Georgia Institute of Technology, Georgia Tech