Observation of intrinsic spin-Hall effect in transport

We study spin transport in n and p-doped mesoscopic H-bar structures fabricated from HgTe/HgCdTe quantum wells. In experiment the current is driven in one leg of H-bar structure while the second one is used to detect the voltage signal (similar to proposal presented in PRB 70, 241301(2004)) In p-doped samples, our data seem to confirm the existence of intrinsic spin-Hall effect. We also present the Landauer- Buttiker calculations with realistic parameters and details of band structure to verify experimental observation.