Imaging Few-Electron Double Quantum Dots in InAs/InP Nanowires

ORAL

Abstract

InAs quantum dots formed in InAs/InP nanowire heterostructures are attractive candidates for nanoelectronics, spintronics and quantum information processing.~Tunnel-coupled double InAs dots defined by InP barriers can be grown using chemical beam epitaxy; each dot can be small enough to hold just a few electrons. It is difficult to lithographically define gates small enough to individually address each dot. With use of a liquid-He cooled scanning probe microscope (SPM), the Coulomb blockade conductance of a single InAs quantum dot in an InAs/InP nanowire has been imaged, using the SPM tip as a movable gate [1]. This approach can individually tune the charge on each InAs dot in an InAs/InP nanowire. We plan to use this technique to investigate tunnel-coupled InAs double dots. \newline [1] A. Bleszynski et al., 28th Int. Conf. on the Physics of Semiconductors, 2006.

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Authors

  • Halvar J. Trodahl

    Dept of Physics, Harvard Univ

  • Erin E. Boyd

    Dept of Physics, Harvard Univ

  • Ania Bleszynski

    Dept of Physics, Yale Univ, Department of Physics, Yale University, Department of Physics, Yale University, New Haven, CT

  • Robert M. Westervelt

    Dept of Physics and Div of Engineering \& Applied Sciences, Harvard Univ, Dept of Physics and Div of Eng and App Sci, Harvard Univ, Harvard University, Mallinckrodt Professor of Applied Physics and of Physics, Department of Physics, Harvard University, Cambridge, MA, Harvard DEAS, Department of Physics

  • Linus Fr\"oberg

    Dept of Solid State Physics, Lund Univ, Lund University

  • L. Samuelson

    Dept of Solid State Physics, Lund Univ, Lund University, Solid State Physics / the Nanometer Structure Consortium, Box 118, S-221 00 Lund, Sweden, Lund University, Solid State Physics, Lund University, Sweden