Imaging of Few-electron InAs Quantum Dots in InAs/InP Nanowires

ORAL

Abstract

InAs quantum dots are promising contenders for nanoelectronics, spintronics and quantum information processing.~ Their large g-factor makes manipulation of electron spins easier at higher temperatures.~ InAs dots, as small as 10 nm long holding only a few electrons, can be formed by InP barriers in InAs/InP nanowire heterostructures grown using chemical beam epitaxy.~ Coulomb blockade transport measurements done using metal contacts and a back gate show excellent results [1].~ Using a liquid-He cooled scanning probe microscope, we imaged an InAs quantum dot that holds only one-electron, with the conducting tip as a movable gate [2].~ Simulations of electron wavefunctions in the dot show the effect of the back gate and the moveable tip. [1] M. Bj\"{o}rk\textit{ et al.}, Nano Letters\textbf{ 4}, 1621 (2004) [2] A. Bleszynski\textit{ et al.}, 28th Int. Conf. Physics of Semiconductors, 2006

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Authors

  • Erin E. Boyd

    Dept of Physics, Harvard Univ

  • Halvar J. Trodahl

    Dept of Physics, Harvard Univ

  • Ania Bleszynski

    Dept of Physics, Yale Univ, Department of Physics, Yale University, Department of Physics, Yale University, New Haven, CT

  • Michael Stopa

    Div of Eng and App Sci, Harvard Univ

  • Robert M. Westervelt

    Dept of Physics and Div of Engineering \& Applied Sciences, Harvard Univ, Dept of Physics and Div of Eng and App Sci, Harvard Univ, Harvard University, Mallinckrodt Professor of Applied Physics and of Physics, Department of Physics, Harvard University, Cambridge, MA, Harvard DEAS, Department of Physics

  • Linus Fr\"oberg

    Dept of Solid State Physics, Lund Univ, Lund University

  • L. Samuelson

    Dept of Solid State Physics, Lund Univ, Lund University, Solid State Physics / the Nanometer Structure Consortium, Box 118, S-221 00 Lund, Sweden, Lund University, Solid State Physics, Lund University, Sweden