Experimental analysis of tunneling from a two-dimensional electron gas into the bulk in the presence of strong scattering.

ORAL

Abstract

An asymmetric double-barrier heterostructure of InGaAs/InAlAs was grown lattice-matched to InP, and electrical contact was made to the InGaAs quantum well layer as well as both bulk InGaAs regions.~ The tunnel current out of the quantum well across one barrier was monitored while varying the electric field across the other (thicker) barrier.~ This measurement yielded the dependence of the tunnel current on the carrier concentration in the quantum well.~ Samples with ErAs dot scattering centers within the quantum well were measured and compared with device simulations to confirm the impact of scattering on tunneling out of a quantum well.

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Authors

  • Kasey Russell

    Harvard University

  • Venkatesh Narayanamurti

    Gordon McKay Laboratory of Applied Science, Harvard University, Harvard University

  • Federico Capasso

    Harvard University, Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138, Division of Engineering and Applied Sciences, Harvard University, Cambridge MA 02138

  • Joshua Zide

    Materials Department, University of California, Santa Barbara, Univ. California, Santa Barbara

  • Arthur Gossard

    Materials Department, University of California, Santa Barbara, Materials Dept., UCSB, UC Santa Barbara, Univ. California, Santa Barbara, University of California, Santa Barbara, UCSB