Spin Response in Organic Spin-Valves based on LSMO Electrodes

ORAL

Abstract

We fabricated spin-valves made of organic semiconductor (OSEC) thin films sandwiched between ferromagnetic La$_{2/3}$Sr$_{1/3}$MnO$_{3}$ (LSMO) and cobalt electrodes, using several OSEC small molecules. We measured the temperature (T) and voltage bias (V) dependence of the spin-valve related giant magneto-resistance (GMR) effect. We found a universal GMR decrease with T, where the GMR completely diminishes at $\sim $ 250K regardless of the OSEC layer. We show evidence that the underlying mechanism for the GMR decrease with T is the decrease in the spin injection capability of the LSMO electrode. We also found that the GMR steeply decreases with V, and is asymmetric respect to the applied voltage direction.

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Authors

  • Fujian Wang

    Department of Physics, University of Utah

  • Cungeng Yang

    University of Utah, Department of Physics, University of Utah

  • Valy Vardeny

    Physics Dept., University of Utah, University of Utah, Department of Physics. University of Utah, University of Utah, Department of Physics, Salt Lake City, Utah 84112, Physics Department, University of Utah

  • Xiaoguang Li

    Hefei National Laboratory for Physics Sciences at Microscale and Department of Materials Science \& Eng, University of Science and Technology of China