Ge-Based Diluted Magnetic Semiconductor films on Si

ORAL

Abstract

Ge-based diluted magnetic semiconductor (DMS) films with 4{\%} manganese (Mn) are grown on Si (001) substrates using molecular beam epitaxy (MBE). Surface morphology is measured by atomic force microscopy (AFM). For a 24-nm thick film, surface roughness around is around 1nm. Structure properties of the film are characterized by X-ray diffraction (XRD) and single crystal film quality by the results which only (004) Ge peak is observed. Magnetic properties are measured by a superconducting quantum interference device (SQUID). Clear hysteresis is observed at room-temperature. The results indicate that high quality Ge-based DMS can be grown on Si with good crystal quality and magnetic properties.

–

Authors

  • Zuoming Zhao

    University of California, Los Angeles

  • Xiaoyu Zhou

    University of California, Los Angeles

  • Kang L. Wang

    Device Research Laboratary, Department of Electrical Engineering, University of California, Los Angeles, Electrical Engineering Department, University of California, Los Angeles, EE Dept., UCLA, University of California, Los Angeles